Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V120 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 99A (Tc)50A (Tc)
Rds On (Max) @ Id, Vgs
5.2mOhm @ 15A, 10V8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 112µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 10 V135 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
5125 pF @ 15 V7400 pF @ 60 V
Power Dissipation (Max)
5W (Ta), 48W (Tc)156W (Tc)
Supplier Device Package
PG-TDSON-8PowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7149ADP-T1-GE3
MOSFET P-CH 30V 50A PPAK SO-8
Vishay Siliconix
35,453
In Stock
1 : ¥7.14000
Cut Tape (CT)
3,000 : ¥2.71766
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
5.2mOhm @ 15A, 10V
2.5V @ 250µA
135 nC @ 10 V
±25V
5125 pF @ 15 V
-
5W (Ta), 48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
2,384
In Stock
1 : ¥23.48000
Cut Tape (CT)
5,000 : ¥10.18272
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
12A (Ta), 99A (Tc)
4.5V, 10V
8mOhm @ 50A, 10V
2.4V @ 112µA
79 nC @ 10 V
±20V
7400 pF @ 60 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.