Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

EPC2302 TRANS GAN 100V DIE .0018OHM EPC	65,502 In Stock	1 : ¥54.27000 Cut Tape (CT) 3,000 : ¥30.13009 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	101A (Ta)	5V	1.8mOhm @ 50A, 5V	2.5V @ 14mA	23 nC @ 5 V	+6V, -4V	3200 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)	7-PowerWQFN
STL30N10F7 MOSFET N-CH 100V 30A POWERFLAT STMicroelectronics	5,710 In Stock	1 : ¥6.98000 Cut Tape (CT) 3,000 : ¥3.70467 Tape & Reel (TR)	DeepGATE™, STripFET™ VII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Tc)	10V	35mOhm @ 4A, 10V	4.5V @ 250µA	14 nC @ 10 V	±20V	920 pF @ 50 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
STL8N10LF3 MOSFET N CH 100V 20A PWRFLT5X6 STMicroelectronics	5,770 In Stock	1 : ¥15.11000 Cut Tape (CT) 3,000 : ¥6.79889 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	20A (Tc)	5V, 10V	35mOhm @ 4A, 10V	3V @ 250µA	20.5 nC @ 10 V	±20V	970 pF @ 25 V	-	4.3W (Ta), 70W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.