Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
80 V100 V
Current - Continuous Drain (Id) @ 25°C
7.9A (Ta), 50A (Tc)14A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 14A, 10V22mOhm @ 7.9A, 10V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V59 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
3885 pF @ 40 V4085 pF @ 50 V
Power Dissipation (Max)
2.3W (Ta), 54W (Tc)2.5W (Ta), 104W (Tc)
Supplier Device Package
8-PQFN (5x6)Power33
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86163P
MOSFET P-CH 100V 7.9A/50A 8PQFN
onsemi
12,021
In Stock
1 : ¥24.05000
Cut Tape (CT)
3,000 : ¥10.84627
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
7.9A (Ta), 50A (Tc)
6V, 10V
22mOhm @ 7.9A, 10V
4V @ 250µA
59 nC @ 10 V
±25V
4085 pF @ 50 V
-
2.5W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
FDMC86340
FDMC86340
MOSFET N-CH 80V 14A/48A POWER33
onsemi
5,496
In Stock
6,000
Factory
1 : ¥15.93000
Cut Tape (CT)
3,000 : ¥7.16836
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
14A (Ta), 48A (Tc)
8V, 10V
6.5mOhm @ 14A, 10V
4V @ 250µA
53 nC @ 10 V
±20V
3885 pF @ 40 V
-
2.3W (Ta), 54W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Power33
8-PowerWDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.