Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs
9.3mOhm @ 40A, 10V120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 10 V24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 25 V1900 pF @ 20 V
Power Dissipation (Max)
625mW (Ta)2.5W (Ta), 35W (Tc)
Supplier Device Package
PG-TDSON-8-5SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXMN3A01FTA
MOSFET N-CH 30V 1.8A SOT23-3
Diodes Incorporated
88,631
In Stock
3,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.24601
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.8A (Ta)
4.5V, 10V
120mOhm @ 2.5A, 10V
1V @ 250µA
3.9 nC @ 10 V
±20V
190 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC093N04LSGATMA1
MOSFET N-CH 40V 13A/49A TDSON
Infineon Technologies
50,339
In Stock
1 : ¥6.57000
Cut Tape (CT)
5,000 : ¥2.35514
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
13A (Ta), 49A (Tc)
4.5V, 10V
9.3mOhm @ 40A, 10V
2V @ 14µA
24 nC @ 10 V
±20V
1900 pF @ 20 V
-
2.5W (Ta), 35W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.