Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQJ479EP-T1_GE3 MOSFET P-CH 80V 32A PPAK SO-8 Vishay Siliconix	17,977 In Stock	1 : ¥9.69000 Cut Tape (CT) 3,000 : ¥4.01919 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	32A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	2.5V @ 250µA	150 nC @ 10 V	±20V	4500 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ459EP-T2_BE3 P-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix	4,172 In Stock	1 : ¥10.10000 Cut Tape (CT) 3,000 : ¥4.18331 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	52A (Tc)	4.5V, 10V	18mOhm @ 3.5A, 10V	2.5V @ 250µA	108 nC @ 10 V	±20V	4586 pF @ 30 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPD70N12S311ATMA2 MOSFET_(120V 300V) Infineon Technologies	0 In Stock Check Lead Time	10,000 : ¥7.03983 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	120 V	70A (Tc)	10V	11.1mOhm @ 70A, 10V	4V @ 83µA	65 nC @ 10 V	±20V	4355 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.