Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMG2302U-7 MOSFET N-CH 20V 4.2A SOT23-3 Diodes Incorporated	339,984 In Stock 126,000 Factory	1 : ¥2.13000 Cut Tape (CT) 3,000 : ¥0.60517 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	90mOhm @ 3.6A, 4.5V	1V @ 50µA	7 nC @ 4.5 V	±8V	594.3 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMG3402L-7 MOSFET N-CH 30V 4A SOT23 Diodes Incorporated	256,482 In Stock 5,154,000 Factory	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.64179 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	52mOhm @ 4A, 10V	1.4V @ 250µA	11.7 nC @ 10 V	±12V	464 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMNH6021SK3Q-13 MOSFET N-CH 60V 50A TO252-2 Diodes Incorporated	872 In Stock 1,067,500 Factory	1 : ¥6.98000 Cut Tape (CT) 2,500 : ¥2.64842 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	23mOhm @ 12A, 10V	3V @ 250µA	20.1 nC @ 10 V	±20V	1143 pF @ 25 V	-	2.1W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.