Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)600mA (Ta)700mA (Ta)2.7A (Ta)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V3.3V, 10V4.5V, 10V5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 12.5A, 10V60mOhm @ 3.1A, 10V700mOhm @ 1.5A, 10V900mOhm @ 430mA, 4.5V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA1.8V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.9 nC @ 10 V3.5 nC @ 4.5 V137 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V138 pF @ 50 V175 pF @ 16 V278 pF @ 15 V5350 pF @ 25 V
Power Dissipation (Max)
370mW (Ta)490mW (Ta)550mW (Ta)625mW (Ta)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3SOT-323TO-263 (D2PAK)
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
5Results

Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
377,535
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXMN10A07FTA
MOSFET N-CH 100V 700MA SOT23-3
Diodes Incorporated
16,787
In Stock
369,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18079
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
700mA (Ta)
6V, 10V
700mOhm @ 1.5A, 10V
4V @ 250µA
2.9 nC @ 10 V
±20V
138 pF @ 50 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-263 (D2Pak)
SQM50P08-25L_GE3
MOSFET P-CHANNEL 80V 50A TO263
Vishay Siliconix
8,334
In Stock
1 : ¥20.61000
Cut Tape (CT)
800 : ¥11.52266
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
50A (Tc)
4.5V, 10V
25mOhm @ 12.5A, 10V
2.5V @ 250µA
137 nC @ 10 V
±20V
5350 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-23-3
DMP2004K-7
MOSFET P-CH 20V 600MA SOT23-3
Diodes Incorporated
943,879
In Stock
525,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.32204
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
900mOhm @ 430mA, 4.5V
1V @ 250µA
-
±8V
175 pF @ 16 V
-
550mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
DMN3061SWQ-13
MOSFET BVDSS: 25V~30V SOT323 T&R
Diodes Incorporated
10,455
In Stock
80,000
Factory
1 : ¥3.53000
Cut Tape (CT)
10,000 : ¥0.53037
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.7A (Ta)
3.3V, 10V
60mOhm @ 3.1A, 10V
1.8V @ 250µA
3.5 nC @ 4.5 V
±20V
278 pF @ 15 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.