Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)6.4A (Ta)
Rds On (Max) @ Id, Vgs
19mOhm @ 6.5A, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V70 nC @ 10 V
Power Dissipation (Max)
300mW (Ta)1.5W (Ta)
Supplier Device Package
8-TSSOPSOT-23-3 (TO-236)
Package / Case
8-TSSOP (0.173", 4.40mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002K
MOSFET N-CH 60V 320MA SOT23
onsemi
90,536
In Stock
282,000
Factory
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.49899
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-TSSOP 8-MSOP
SI6415DQ-T1-GE3
MOSFET P-CH 30V 6.5A 8TSSOP
Vishay Siliconix
5,448
In Stock
1 : ¥14.70000
Cut Tape (CT)
3,000 : ¥6.61694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
6.4A (Ta)
4.5V, 10V
19mOhm @ 6.5A, 10V
1V @ 250µA (Min)
70 nC @ 10 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.