Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML5103TRPBF MOSFET P-CH 30V 760MA SOT23 Infineon Technologies	56,925 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.77862 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	760mA (Ta)	4.5V, 10V	600mOhm @ 600mA, 10V	1V @ 250µA	5.1 nC @ 10 V	±20V	75 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
IRLML2803TRPBF MOSFET N-CH 30V 1.2A SOT23 Infineon Technologies	132,289 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80297 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	1V @ 250µA	5 nC @ 10 V	±20V	85 pF @ 25 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
NTF6P02T3G MOSFET P-CH 20V 10A SOT223 onsemi	30,874 In Stock	1 : ¥11.00000 Cut Tape (CT) 4,000 : ¥4.55341 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	10A (Ta)	2.5V, 4.5V	50mOhm @ 6A, 4.5V	1V @ 250µA	20 nC @ 4.5 V	±8V	1200 pF @ 16 V	-	8.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.