Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT4018KRC15 1200V, 18M, 4-PIN THD, TRENCH-ST Rohm Semiconductor	4,786 In Stock	1 : ¥337.59000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	81A (Tc)	18V	23.4mOhm @ 42A, 18V	4.8V @ 22.2mA	170 nC @ 18 V	+21V, -4V	4532 pF @ 800 V	-	312W	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
SCT4026DEC11 750V, 26M, 3-PIN THD, TRENCH-STR Rohm Semiconductor	4,931 In Stock	1 : ¥174.54000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	56A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	176W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT4013DRC15 750V, 13M, 4-PIN THD, TRENCH-STR Rohm Semiconductor	0 In Stock Check Lead Time	1 : ¥331.92000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	105A (Tc)	18V	16.9mOhm @ 58A, 18V	4.8V @ 30.8mA	170 nC @ 18 V	+21V, -4V	4580 pF @ 500 V	-	312W	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.