Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

ISC027N10NM6ATMA1 TRENCH >=100V PG-TDSON-8 Infineon Technologies	9,422 In Stock	1 : ¥29.23000 Cut Tape (CT) 5,000 : ¥13.63340 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	23A (Ta), 192A (Tc)	8V, 10V	2.7mOhm @ 50A, 10V	3.3V @ 116µA	72.5 nC @ 10 V	±20V	5500 pF @ 50 V	-	3W (Ta), 217W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
C3M0025065K GEN 3 650V 25 M SIC MOSFET Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : ¥254.09000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	97A (Tc)	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	112 nC @ 15 V	+19V, -8V	2980 pF @ 600 V	-	326W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.