Single Bipolar Transistors

Results: 2
Packaging
BulkTube
Current - Collector (Ic) (Max)
500 mA15 A
Voltage - Collector Emitter Breakdown (Max)
60 V80 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA3V @ 3.3A, 10A
Current - Collector Cutoff (Max)
100nA700µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 4V100 @ 100mA, 1V
Power - Max
625 mW90 W
Frequency - Transition
2.5MHz100MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)TO-247-3
Supplier Device Package
TO-247-3TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
MPSA06
BJT TO92 80V NPN 0.625W 150C
onsemi
3,043
In Stock
1 : ¥3.45000
Bulk
-
Bulk
Active
NPN
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625 mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-247-3
TIP3055G
TRANS NPN 60V 15A TO247-3
onsemi
284
In Stock
360
Factory
1 : ¥20.44000
Tube
-
Tube
Active
NPN
15 A
60 V
3V @ 3.3A, 10A
700µA
20 @ 4A, 4V
90 W
2.5MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.