Single FETs, MOSFETs

Results: 3
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)500mA (Ta)900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
500mOhm @ 1A, 4.5V800mOhm @ 400mA, 10V1.1Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 10 V1.1 nC @ 10 V2.4 nC @ 4.5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
32 pF @ 30 V39 pF @ 30 V146 pF @ 10 V
Power Dissipation (Max)
300mW (Ta), 4.7W (Tc)500mW (Ta), 4.7W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
27,513
In Stock
1 : ¥3.28000
Cut Tape (CT)
15,000 : ¥0.63601
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
800mOhm @ 400mA, 10V
2.5V @ 250µA
1.1 nC @ 10 V
±20V
39 pF @ 30 V
-
300mW (Ta), 4.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0603-3 (SOT8013)
0201 (0603 Metric)
DFN0603-3 (SOT8013)
PMX400UPZ
PMX400UP/SOT8013/DFN0603-3
Nexperia USA Inc.
16,500
In Stock
1 : ¥3.78000
Cut Tape (CT)
15,000 : ¥0.72080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
900mA (Ta)
1.8V, 4.5V
500mOhm @ 1A, 4.5V
900mV @ 250µA
2.4 nC @ 4.5 V
±12V
146 pF @ 10 V
-
500mW (Ta), 4.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0603-3 (SOT8013)
0201 (0603 Metric)
15,000
In Stock
1 : ¥3.37000
Cut Tape (CT)
15,000 : ¥0.63850
Bulk
-
Cut Tape (CT)
Digi-Reel®
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
4.5V, 10V
1.1Ohm @ 400mA, 10V
2.5V @ 250µA
1 nC @ 10 V
±20V
32 pF @ 30 V
-
300mW (Ta), 4.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0603-3 (SOT8013)
0201 (0603 Metric)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.