Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002KT1G MOSFET N-CH 60V 320MA SOT23-3 onsemi	253,889 In Stock	1 : ¥1.81000 Cut Tape (CT) 3,000 : ¥0.29870 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	320mA (Ta)	4.5V, 10V	1.6Ohm @ 500mA, 10V	2.3V @ 250µA	0.7 nC @ 4.5 V	±20V	24.5 pF @ 20 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMP3099L-7 MOSFET P-CH 30V 3.8A SOT23 Diodes Incorporated	294,899 In Stock	1 : ¥2.71000 Cut Tape (CT) 3,000 : ¥0.49040 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.8A (Ta)	4.5V, 10V	65mOhm @ 3.8A, 10V	2.1V @ 250µA	5.2 nC @ 4.5 V	±20V	563 pF @ 25 V	-	1.08W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
TP0610K-T1-E3 MOSFET P-CH 60V 185MA SOT23-3 Vishay Siliconix	769,101 In Stock	1 : ¥3.86000 Cut Tape (CT) 3,000 : ¥1.04982 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	185mA (Ta)	4.5V, 10V	6Ohm @ 500mA, 10V	3V @ 250µA	1.7 nC @ 15 V	±20V	23 pF @ 25 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.