Single FETs, MOSFETs

Results: 4
Series
MDmesh™STripFET™STripFET™ II
Drain to Source Voltage (Vdss)
75 V200 V250 V800 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)45A (Tc)75A (Tc)80A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 40A, 10V34mOhm @ 37A, 10V69mOhm @ 22A, 10V400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43.6 nC @ 10 V68.2 nC @ 10 V84 nC @ 10 V160 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1630 pF @ 25 V2670 pF @ 25 V3260 pF @ 25 V3700 pF @ 25 V
Power Dissipation (Max)
150W (Tc)160W (Tc)190W (Tc)300W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)
Supplier Device Package
TO-220TO-247-3
Package / Case
TO-220-3TO-247-3
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
STP75NF75
MOSFET N-CH 75V 80A TO220AB
STMicroelectronics
1,915
In Stock
1 : ¥15.43000
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N-Channel
MOSFET (Metal Oxide)
75 V
80A (Tc)
10V
11mOhm @ 40A, 10V
4V @ 250µA
160 nC @ 10 V
±20V
3700 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP11NM80
MOSFET N-CH 800V 11A TO220AB
STMicroelectronics
693
In Stock
1 : ¥50.24000
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N-Channel
MOSFET (Metal Oxide)
800 V
11A (Tc)
10V
400mOhm @ 5.5A, 10V
5V @ 250µA
43.6 nC @ 10 V
±30V
1630 pF @ 25 V
-
150W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
STP50NF25
MOSFET N-CH 250V 45A TO220AB
STMicroelectronics
1,329
In Stock
1 : ¥22.08000
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N-Channel
MOSFET (Metal Oxide)
250 V
45A (Tc)
10V
69mOhm @ 22A, 10V
4V @ 250µA
68.2 nC @ 10 V
±20V
2670 pF @ 25 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-247-3 HiP
STW75NF20
MOSFET N-CH 200V 75A TO247-3
STMicroelectronics
71
In Stock
1 : ¥38.09000
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N-Channel
MOSFET (Metal Oxide)
200 V
75A (Tc)
10V
34mOhm @ 37A, 10V
4V @ 250µA
84 nC @ 10 V
±20V
3260 pF @ 25 V
-
190W (Tc)
-50°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.