Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS®-P2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V40 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Ta)85A (Tc)
Rds On (Max) @ Id, Vgs
7.3mOhm @ 85A, 10V50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V89 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 10 V6085 pF @ 25 V
Power Dissipation (Max)
1.3W (Ta)88W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23PG-TO252-3-313
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
110,622
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO252-3
IPD85P04P407ATMA2
MOSFET P-CH 40V 85A TO252-3
Infineon Technologies
18,638
In Stock
1 : ¥14.53000
Cut Tape (CT)
2,500 : ¥6.56952
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
85A (Tc)
-
7.3mOhm @ 85A, 10V
4V @ 150µA
89 nC @ 10 V
±20V
6085 pF @ 25 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.