Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V5V
Rds On (Max) @ Id, Vgs
31mOhm @ 4A, 4.5V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 1mA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V1357 pF @ 10 V
Power Dissipation (Max)
225mW (Ta)800mW (Ta)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT3G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
66,089
In Stock
1 : ¥2.96000
Cut Tape (CT)
10,000 : ¥0.38341
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP1045UQ-7
MOSFET P-CH 12V 4A SOT23 T&R 3
Diodes Incorporated
2,665
In Stock
4,278,000
Factory
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.85259
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4A (Ta)
1.8V, 4.5V
31mOhm @ 4A, 4.5V
1V @ 250µA
15.8 nC @ 4.5 V
±8V
1357 pF @ 10 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.