Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

CSD19537Q3 MOSFET N-CH 100V 9.7A/50A 8VSON Texas Instruments	4,188 In Stock	1 : ¥9.85000 Cut Tape (CT) 2,500 : ¥4.07428 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	50A (Ta)	6V, 10V	14.5mOhm @ 10A, 10V	3.6V @ 250µA	21 nC @ 10 V	±20V	1680 pF @ 50 V	-	2.8W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN
RH6L040BGTB1 NCH 60V 65A, HSMT8, POWER MOSFET Rohm Semiconductor	21,182 In Stock	1 : ¥16.25000 Cut Tape (CT) 3,000 : ¥7.34453 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Tc)	4.5V, 10V	7.1mOhm @ 40A, 10V	2.5V @ 1mA	18.8 nC @ 10 V	±20V	1320 pF @ 30 V	-	59W (Tc)	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
DMN65D8LFB-7B MOSFET N-CH 60V 260MA 3DFN Diodes Incorporated	451,032 In Stock 100,000 Factory	1 : ¥1.89000 Cut Tape (CT) 10,000 : ¥0.20524 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	260mA (Ta)	5V, 10V	3Ohm @ 115mA, 10V	2V @ 250µA	-	±20V	25 pF @ 25 V	-	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X1-DFN1006-3	3-UFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.