Single FETs, MOSFETs

Results: 2
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3.16A (Ta)3.3A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs
47mOhm @ 3.5A, 10V60mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 15 V305 pF @ 15 V
Power Dissipation (Max)
750mW (Ta)1.1W (Ta), 1.7W (Tc)
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2304DDS-T1-GE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
Vishay Siliconix
47,925
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90839
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
60mOhm @ 3.2A, 10V
2.2V @ 250µA
6.7 nC @ 10 V
±20V
235 pF @ 15 V
-
1.1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23(TO-236)
SI2306BDS-T1-BE3
N-CHANNEL 30-V (D-S) MOSFET
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.16661
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.16A (Ta)
4.5V, 10V
47mOhm @ 3.5A, 10V
3V @ 250µA
4.5 nC @ 5 V
±20V
305 pF @ 15 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.