Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V80 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 25A, 10V150mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 10 V110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
205 pF @ 30 V8000 pF @ 40 V
Power Dissipation (Max)
2W (Tc)294W (Tc)
Supplier Device Package
LFPAK56, Power-SO8SOT-23-3 (TO-236)
Package / Case
SOT-1023, 4-LFPAKTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SQ2308CES-T1_BE3
MOSFET N-CH 60V 2.3A SOT23-3
Vishay Siliconix
64,270
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.3A (Tc)
4.5V, 10V
150mOhm @ 2.3A, 10V
2.5V @ 250µA
5.3 nC @ 10 V
±20V
205 pF @ 30 V
-
2W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-1023
PSMN4R2-80YSEX
PSMN4R2-80YSE/SOT1023/4 LEADS
Nexperia USA Inc.
2,490
In Stock
1 : ¥23.81000
Cut Tape (CT)
1,500 : ¥10.96458
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
170A (Tc)
10V
4.2mOhm @ 25A, 10V
3.6V @ 1mA
110 nC @ 10 V
±20V
8000 pF @ 40 V
-
294W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.