Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-HEXFET®
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 10V35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 5 V130 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V8079 pF @ 30 V
Power Dissipation (Max)
68W (Tc)306W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLZ34NPBF
MOSFET N-CH 55V 30A TO220AB
Infineon Technologies
49,011
In Stock
1 : ¥11.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
30A (Tc)
4V, 10V
35mOhm @ 16A, 10V
2V @ 250µA
25 nC @ 5 V
±16V
880 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
PSMN3R0-60PS,127
MOSFET N-CH 60V 100A TO220AB
Nexperia USA Inc.
4,248
In Stock
1 : ¥29.80000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
10V
3mOhm @ 25A, 10V
4V @ 1mA
130 nC @ 10 V
±20V
8079 pF @ 30 V
-
306W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.