FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

CSD83325LT MOSFET 2N-CH 12V 6PICOSTAR Texas Instruments	678 In Stock	1 : ¥10.10000 Cut Tape (CT) 250 : ¥6.59608 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	-	12V	-	-	1.25V @ 250µA	10.9nC @ 4.5V	-	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA	6-PicoStar
TSM6968DCA RVG MOSFET 2N-CH 20V 6.5A 8TSSOP Taiwan Semiconductor Corporation	126 In Stock	1 : ¥6.81000 Cut Tape (CT) 501,000 : ¥2.25770 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	20V	6.5A (Tc)	22mOhm @ 6A, 4.5V	1V @ 250µA	15nC @ 4.5V	950pF @ 10V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.