Single Bipolar Transistors

Results: 3
Manufacturer
Nexperia USA Inc.Rohm SemiconductorTaiwan Semiconductor Corporation
Series
-BC846x
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
100 mA120 mA
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 100mA500mV @ 5mA, 100mA
Current - Collector Cutoff (Max)
15nA (ICBO)100nA (ICBO)
Power - Max
200 mW250 mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23SST3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-236AB
BC846B,215
TRANS NPN 65V 0.1A TO236AB
Nexperia USA Inc.
581,078
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18913
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
250 mW
100MHz
150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
29,784
In Stock
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.17673
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
65 V
500mV @ 5mA, 100mA
100nA (ICBO)
200 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
RUC002N05T116
BC846BHZGT116
TRANS NPN 65V 0.12A SST3
Rohm Semiconductor
2,178
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.51344
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
120 mA
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200 mW
-
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SST3
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of 3

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.