Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial CoVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)11.4A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 9.1A, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V1350 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)2.5W (Ta), 5W (Tc)
Supplier Device Package
8-SOICSOT-23
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23
2N7002K-TP
MOSFET N-CH 60V 340MA SOT23
Micro Commercial Co
25,398
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.36650
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
40 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4435DDY-T1-E3
MOSFET P-CH 30V 11.4A 8SO
Vishay Siliconix
17,592
In Stock
1 : ¥5.91000
Cut Tape (CT)
2,500 : ¥2.24494
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
11.4A (Tc)
4.5V, 10V
24mOhm @ 9.1A, 10V
3V @ 250µA
50 nC @ 10 V
±20V
1350 pF @ 15 V
-
2.5W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.