Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

ZXMN4A06GTA MOSFET N-CH 40V 5A SOT223 Diodes Incorporated	10,132 In Stock	1 : ¥7.47000 Cut Tape (CT) 1,000 : ¥3.18992 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	5A (Ta)	4.5V, 10V	50mOhm @ 4.5A, 10V	1V @ 250µA	18.2 nC @ 10 V	±20V	770 pF @ 40 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
MCAC95N065Y-TP MOSFET N-CH DFN5060 Micro Commercial Co	5,000 In Stock	1 : ¥14.45000 Cut Tape (CT) 5,000 : ¥6.25356 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	65 V	95A (Tc)	4.5V, 10V	2.5mOhm @ 20A, 10V	2.2V @ 250µA	93 nC @ 10 V	±20V	5950 pF @ 25 V	-	120W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
IAUS300N08S5N012TATMA1 MOSFET N-CH 80V 300A HDSOP-16-2 Infineon Technologies	0 In Stock Check Lead Time	1 : ¥55.58000 Cut Tape (CT) 1,800 : ¥31.53482 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	300A (Tj)	6V, 10V	1.2mOhm @ 100A, 10V	3.8V @ 275µA	231 nC @ 10 V	±20V	16250 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.