Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
250mOhm @ 910mA, 10V990mOhm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V5 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
55.2 pF @ 16 V85 pF @ 25 V
Power Dissipation (Max)
320mW (Ta)540mW (Ta)
Supplier Device Package
Micro3™/SOT-23X2-DFN0606-3
Package / Case
3-XFDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2803TRPBF
MOSFET N-CH 30V 1.2A SOT23
Infineon Technologies
127,535
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80294
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.2A (Ta)
4.5V, 10V
250mOhm @ 910mA, 10V
1V @ 250µA
5 nC @ 10 V
±20V
85 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
X2-DFN0606-3
DMN2990UFZ-7B
MOSFET N-CH 20V 250MA 3DFN
Diodes Incorporated
1,177,338
In Stock
1 : ¥3.86000
Cut Tape (CT)
10,000 : ¥0.68116
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.5 nC @ 4.5 V
±8V
55.2 pF @ 16 V
-
320mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.