Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
770mA (Ta)800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V
Rds On (Max) @ Id, Vgs
620mOhm @ 600mA, 4.5V670mOhm @ 770mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
0.31 nC @ 4.5 V0.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
21.3 pF @ 10 V30.3 pF @ 15 V
Power Dissipation (Max)
370mW (Ta), 2.2W (Tc)380mW (Ta), 2.8W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DFN0606-3
PMH600UNEH
MOSFET N-CH 20V 800MA DFN0606-3
Nexperia USA Inc.
5,533
In Stock
1 : ¥2.63000
Cut Tape (CT)
10,000 : ¥0.34467
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
620mOhm @ 600mA, 4.5V
950mV @ 250µA
0.31 nC @ 4.5 V
±8V
21.3 pF @ 10 V
-
370mW (Ta), 2.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
DFN0606-3
PMH550UNEH
MOSFET N-CH 30V 770MA DFN0606-3
Nexperia USA Inc.
31,365
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.40212
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
770mA (Ta)
1.5V, 4.5V
670mOhm @ 770mA, 4.5V
950mV @ 250µA
0.4 nC @ 4 V
±8V
30.3 pF @ 15 V
-
380mW (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.