Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesInternational RectifieronsemiVishay Siliconix
Series
HEXFET®HEXFET®, StrongIRFET™PowerTrench®TrenchFET® Gen IV
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 10A (Tc)38A (Ta), 211A (Tc)49A (Ta), 100A (Tc)50.2A (Ta), 177A (Tc)100A (Ta), 430A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
0.4mOhm @ 30A, 10V0.75mOhm @ 50A, 10V0.95mOhm @ 50A, 10V1.35mOhm @ 10A, 10V16mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
1.1V @ 100µA1.1V @ 150µA1.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V53 nC @ 10 V158 nC @ 4.5 V230 nC @ 4.5 V310 nC @ 10 V
Vgs (Max)
+12V, -8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 15 V3415 pF @ 10 V8292 pF @ 10 V10890 pF @ 10 V12430 pF @ 10 V
Power Dissipation (Max)
2.1W (Ta), 63W (Tc)2.4W (Ta)3.6W (Ta), 156W (Tc)5W (Ta), 62.5W (Tc)6.3W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
6-MicroFET (2x2)8-PQFN (5x6)DIRECTFET™ MDPowerPAK® SO-8
Package / Case
6-WDFN Exposed Pad8-PowerVDFNDirectFET™ Isometric MDPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-WDFN Exposed Pad
FDMA8878
MOSFET N-CH 30V 9A/10A 6MICROFET
onsemi
9,613
In Stock
1 : ¥13.05000
Cut Tape (CT)
3,000 : ¥5.41568
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
9A (Ta), 10A (Tc)
4.5V, 10V
16mOhm @ 9A, 10V
3V @ 250µA
12 nC @ 10 V
±20V
720 pF @ 15 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
PowerPAK SO-8
SIR178DP-T1-RE3
MOSFET N-CH 20V 100A/430A PPAK
Vishay Siliconix
1,175
In Stock
1 : ¥13.63000
Cut Tape (CT)
3,000 : ¥6.14030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100A (Ta), 430A (Tc)
2.5V, 10V
0.4mOhm @ 30A, 10V
1.5V @ 250µA
310 nC @ 10 V
+12V, -8V
12430 pF @ 10 V
-
6.3W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8PQFN
IRFH6200TRPBF
MOSFET N-CH 20V 49A/100A 8PQFN
Infineon Technologies
1,962
In Stock
1 : ¥21.76000
Cut Tape (CT)
4,000 : ¥6.28028
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
49A (Ta), 100A (Tc)
2.5V, 10V
0.95mOhm @ 50A, 10V
1.1V @ 150µA
230 nC @ 4.5 V
±12V
10890 pF @ 10 V
-
3.6W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
PowerPAK SO-8
SIR800ADP-T1-GE3
MOSFET N-CH 20V 50.2A/177A PPAK
Vishay Siliconix
8,954
In Stock
1 : ¥12.23000
Cut Tape (CT)
3,000 : ¥5.51392
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
50.2A (Ta), 177A (Tc)
2.5V, 10V
1.35mOhm @ 10A, 10V
1.5V @ 250µA
53 nC @ 10 V
+12V, -8V
3415 pF @ 10 V
-
5W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
INFIRFAUIRF7647S2TR
IRL6283MTRPBF
DIRECTFET N-CHANNEL POWER MOSFET
International Rectifier
4,800
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
20 V
38A (Ta), 211A (Tc)
2.5V, 4.5V
0.75mOhm @ 50A, 10V
1.1V @ 100µA
158 nC @ 4.5 V
±12V
8292 pF @ 10 V
-
2.1W (Ta), 63W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET™ MD
DirectFET™ Isometric MD
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.