Single FETs, MOSFETs

Results: 4
Manufacturer
EPCInfineon TechnologiesonsemiTransphorm
Series
eGaN®HEXFET®SuperFET® III, FRFET®TP65H070L
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V200 V650 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)25A (Tc)48A (Ta)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 2.5V5V10V
Rds On (Max) @ Id, Vgs
8mOhm @ 20A, 5V27.4mOhm @ 35A, 10V57mOhm @ 2.3A, 2.5V85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
750mV @ 11µA2.5V @ 7mA4.8V @ 700µA5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
1.7 nC @ 2.5 V9.3 nC @ 10 V11 nC @ 5 V227 nC @ 10 V
Vgs (Max)
+6V, -4V±8V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
529 pF @ 10 V600 pF @ 400 V1140 pF @ 100 V7780 pF @ 400 V
Power Dissipation (Max)
500mW (Ta)96W (Tc)595W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-PQFN (8x8)DiePG-SOT23TO-247-3
Package / Case
3-PowerDFNDieTO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2034C
GANFET N-CH 200V 48A DIE
EPC
23,008
In Stock
1 : ¥75.94000
Cut Tape (CT)
500 : ¥47.88582
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
8mOhm @ 20A, 5V
2.5V @ 7mA
11 nC @ 5 V
+6V, -4V
1140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
TO-247-3
NVHL027N65S3F
MOSFET N-CH 650V 75A TO247-3
onsemi
479
In Stock
450 : ¥113.55729
Tube
1 : ¥164.44000
Tube
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
27.4mOhm @ 35A, 10V
5V @ 3mA
227 nC @ 10 V
±30V
7780 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
SOT-23-3
BSS806NEH6327XTSA1
MOSFET N-CH 20V 2.3A SOT23-3
Infineon Technologies
64,061
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71245
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Ta)
1.8V, 2.5V
57mOhm @ 2.3A, 2.5V
750mV @ 11µA
1.7 nC @ 2.5 V
±8V
529 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
PQFN_8x8
TP65H070LSG-TR
GANFET N-CH 650V 25A PQFN88
Transphorm
12,306
In Stock
1 : ¥72.82000
Cut Tape (CT)
500 : ¥61.06042
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
25A (Tc)
10V
85mOhm @ 16A, 10V
4.8V @ 700µA
9.3 nC @ 10 V
±20V
600 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PQFN (8x8)
3-PowerDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.