JFETs

Results: 2
Series
2N4117AU309
Voltage - Breakdown (V(BR)GSS)
25 V40 V
Current - Drain (Idss) @ Vds (Vgs=0)
30 µA @ 10 V12 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id
600 mV @ 1 nA1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds
3pF @ 10V4pF @ 10V
Power - Max
300 mW500 mW
Operating Temperature
-55°C ~ 150°C (TJ)-
Package / Case
TO-206AA, TO-18-3 Metal CanTO-206AF, TO-72-4 Metal Can
Supplier Device Package
TO-18-3TO-72-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Current - Drain (Idss) @ Vds (Vgs=0)
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
733
In Stock
1 : ¥49.34000
Bulk
Bulk
Active
N-Channel
40 V
30 µA @ 10 V
600 mV @ 1 nA
3pF @ 10V
-
300 mW
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72-4
440
In Stock
1 : ¥49.34000
Bulk
Bulk
Active
N-Channel
25 V
12 mA @ 10 V
1 V @ 1 nA
4pF @ 10V
35 Ohms
500 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18-3
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of 2

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.