Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2337DS-T1-E3 MOSFET P-CH 80V 2.2A SOT23-3 Vishay Siliconix	24,378 In Stock	1 : ¥7.96000 Cut Tape (CT) 3,000 : ¥3.28236 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	2.2A (Tc)	6V, 10V	270mOhm @ 1.2A, 10V	4V @ 250µA	17 nC @ 10 V	±20V	500 pF @ 40 V	-	760mW (Ta), 2.5W (Tc)	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2310B-TP MOSFET N-CH 60V 3A SOT23 Micro Commercial Co	103,130 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.53750 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tj)	4.5V, 10V	105mOhm @ 3A, 10V	1.3V @ 250µA	6 nC @ 4.5 V	±16V	247 pF @ 30 V	-	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
PMV30UN2R MOSFET N-CH 20V 4.2A TO236AB Nexperia USA Inc.	138,235 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥0.83198 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.2V, 4.5V	32mOhm @ 4.2A, 4.5V	900mV @ 250µA	11 nC @ 4.5 V	±12V	655 pF @ 10 V	-	490mW (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.