Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®UltraFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Tc)40A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 40A, 10V19mOhm @ 20A, 10V47mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V40 nC @ 10 V326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 25 V2695 pF @ 50 V11100 pF @ 50 V
Power Dissipation (Max)
2.5W (Ta)13.6W (Ta), 375W (Tc)33.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICTO-220F-3TO-263 (D2PAK)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3 Full PackTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS2572
MOSFET N-CH 150V 4.9A 8SOIC
onsemi
12,050
In Stock
45,000
Factory
1 : ¥13.46000
Cut Tape (CT)
2,500 : ¥6.06554
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
4.9A (Tc)
6V, 10V
47mOhm @ 4.9A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
2050 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-263 (D2Pak)
SUM90P10-19L-E3
MOSFET P-CH 100V 90A TO263
Vishay Siliconix
8,045
In Stock
1 : ¥35.63000
Cut Tape (CT)
800 : ¥21.49265
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
19mOhm @ 20A, 10V
3V @ 250µA
326 nC @ 10 V
±20V
11100 pF @ 50 V
-
13.6W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220F
FDPF085N10A
MOSFET N-CH 100V 40A TO220F
onsemi
756
In Stock
1 : ¥16.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
10V
8.5mOhm @ 40A, 10V
4V @ 250µA
40 nC @ 10 V
±20V
2695 pF @ 50 V
-
33.3W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.