Single FETs, MOSFETs

Results: 3
Manufacturer
STMicroelectronicsVishay Siliconix
Series
-STripFET™ IIITrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
40 V100 V650 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)120A (Tc)270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V18V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 80A, 10V10.1mOhm @ 30A, 10V105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 18 V150 nC @ 10 V190 nC @ 10 V
Vgs (Max)
±20V+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V7000 pF @ 50 V7500 pF @ 25 V
Power Dissipation (Max)
250W (Tc)300W (Tc)375W (Tc)
Supplier Device Package
10-PowerSOH2PAK-7TO-263 (D2PAK)
Package / Case
PowerSO-10 Exposed Bottom PadTO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerSO-10
STV270N4F3
MOSFET N-CH 40V 270A 10POWERSO
STMicroelectronics
1,120
In Stock
1 : ¥45.32000
Cut Tape (CT)
600 : ¥27.36328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
1.5mOhm @ 80A, 10V
4V @ 250µA
150 nC @ 10 V
±20V
7500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM70101EL-GE3
MOSFET P-CH 100V 120A TO263
Vishay Siliconix
60
In Stock
1 : ¥33.41000
Cut Tape (CT)
800 : ¥20.18586
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
4.5V, 10V
10.1mOhm @ 30A, 10V
2.5V @ 250µA
190 nC @ 10 V
±20V
7000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
H2PAK-7
SCTH40N120G2V7AG
SICFET N-CH 650V 33A H2PAK-7
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥140.14000
Cut Tape (CT)
1,000 : ¥88.77721
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
105mOhm @ 20A, 18V
5V @ 1mA
63 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.