IGBT Modules

Results: 2
Configuration
2 IndependentHalf Bridge
Operating Temperature
-40°C ~ 85°C-25°C ~ 85°C
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Series
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IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Vce(on) (Max) @ Vge, Ic
Input
NTC Thermistor
Operating Temperature
Mounting Type
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12
In Stock
12 : ¥1,454.87000
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Tray
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-
2 Independent
1700 V
-
Standard
No
-40°C ~ 85°C
Through Hole
Module
Module
0
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1 : ¥1,346.17000
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Half Bridge
1700 V
-
Standard
No
-25°C ~ 85°C
Through Hole
Module
Module
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IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.