Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STD20NF06LT4 MOSFET N-CH 60V 24A DPAK STMicroelectronics	11,285 In Stock	1 : ¥11.99000 Cut Tape (CT) 2,500 : ¥4.95748 Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	24A (Tc)	5V, 10V	40mOhm @ 12A, 10V	2.5V @ 250µA	13 nC @ 10 V	±18V	660 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTHL020N120SC1 SICFET N-CH 1200V 103A TO247-3 onsemi	447 In Stock	1 : ¥305.16000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	28mOhm @ 60A, 20V	4.3V @ 20mA	203 nC @ 20 V	+25V, -15V	2890 pF @ 800 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.