Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
8 V20 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
630mA (Ta)5.8A (Tc)15.2A (Ta), 56.7A (Tc)23A (Ta), 100A (Tc)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 25A, 10V2.8mOhm @ 50A, 10V35mOhm @ 4.4A, 4.5V52mOhm @ 10A, 10V400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.2V @ 93µA2.3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V30 nC @ 8 V52 nC @ 10 V175 nC @ 10 V400 nC @ 10 V
Vgs (Max)
±6V±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
60.67 pF @ 16 V960 pF @ 4 V2440 pF @ 50 V13000 pF @ 30 V14300 pF @ 10 V
Power Dissipation (Max)
280mW (Ta)960mW (Ta), 1.7W (Tc)2.5W (Ta), 139W (Tc)5W (Ta), 69.4W (Tc)6.25W (Ta), 104W (Tc)
Supplier Device Package
PG-TDSON-8-1PowerPAK® SO-8SOT-23-3 (TO-236)SOT-523
Package / Case
8-PowerTDFNPowerPAK® SO-8SOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
Vishay Siliconix
57,127
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
8 V
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
1V @ 250µA
30 nC @ 8 V
±8V
960 pF @ 4 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SI7141DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
22,992
In Stock
1 : ¥18.31000
Cut Tape (CT)
3,000 : ¥8.27116
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
4.5V, 10V
1.9mOhm @ 25A, 10V
2.3V @ 250µA
400 nC @ 10 V
±20V
14300 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PG-TDSON-8-1
BSC028N06LS3GATMA1
MOSFET N-CH 60V 23A/100A TDSON
Infineon Technologies
8,813
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.55227
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
23A (Ta), 100A (Tc)
4.5V, 10V
2.8mOhm @ 50A, 10V
2.2V @ 93µA
175 nC @ 10 V
±20V
13000 pF @ 30 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
SOT-523
DMG1012T-13
MOSFET N-CH 20V 630MA SOT523 T&R
Diodes Incorporated
18,528
In Stock
5,330,000
Factory
1 : ¥2.46000
Cut Tape (CT)
10,000 : ¥0.31595
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
PowerPAK-SO-8-Single
SIJ4108DP-T1-GE3
N-CHANNEL 100 V (D-S) MOSFET POW
Vishay Siliconix
11,736
In Stock
1 : ¥13.55000
Cut Tape (CT)
3,000 : ¥6.12509
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
15.2A (Ta), 56.7A (Tc)
7.5V, 10V
52mOhm @ 10A, 10V
4V @ 250µA
52 nC @ 10 V
±20V
2440 pF @ 50 V
-
5W (Ta), 69.4W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.