Single FETs, MOSFETs

Results: 2
Series
-SuperFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
60 V600 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V
Rds On (Max) @ Id, Vgs
70mOhm @ 23.5A, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA5V @ 250µA
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V8000 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)417W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3 (TO-236)TO-3PN
Package / Case
TO-236-3, SC-59, SOT-23-3TO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
23,662
In Stock
1 : ¥2.22000
Cut Tape (CT)
10,000 : ¥0.28474
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-3P-3,TO-247-3
FCA47N60
MOSFET N-CH 600V 47A TO3PN
onsemi
114
In Stock
1 : ¥88.58000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
47A (Tc)
10V
70mOhm @ 23.5A, 10V
5V @ 250µA
270 nC @ 10 V
±30V
8000 pF @ 25 V
-
417W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.