IGBT Modules

Results: 3
Packaging
BulkTray
Configuration
2 IndependentHalf Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V1700 V
Current - Collector (Ic) (Max)
400 A440 A460 A
Power - Max
1600 W1800 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 300A2.3V @ 15V, 300A2.3V @ 15V, 400A
Current - Collector Cutoff (Max)
1 mA5 mA
Input Capacitance (Cies) @ Vce
19 nF @ 25 V24.5 nF @ 25 V36 nF @ 25 V
NTC Thermistor
NoYes
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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of 3
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
16
In Stock
22
Marketplace
2 : ¥1,713.13000
Bulk
1 : ¥1,625.73000
Tray
Bulk
Tray
Active
Trench Field Stop
Half Bridge
1700 V
400 A
-
2.3V @ 15V, 400A
1 mA
36 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
62mmFF1682170244
FF300R17KE4HOSA1
IGBT MOD 1700V 440A 1800W
Infineon Technologies
18
In Stock
1 : ¥1,198.34000
Tray
Tray
Active
Trench Field Stop
2 Independent
1700 V
440 A
1800 W
2.3V @ 15V, 300A
1 mA
24.5 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R12KE4HOSA1
FF300R12KE4HOSA1
IGBT MOD 1200V 460A 1600W
Infineon Technologies
0
In Stock
Check Lead Time
1 : ¥937.36000
Tray
Tray
Active
Trench Field Stop
2 Independent
1200 V
460 A
1600 W
2.15V @ 15V, 300A
5 mA
19 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
Showing
of 3

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.