Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Panjit International Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
20mOhm @ 6.5A, 4.5V400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.92 nC @ 4.5 V14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V660 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)1.3W (Ta)
Supplier Device Package
SOT-23-3SOT-523 Flat Leads
Package / Case
3-SMD, SOT-23-3 VariantSC-89, SOT-490
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
AOSS32136C
MOSFET N-CH 20V 6.5A SOT23-3
Alpha & Omega Semiconductor Inc.
206,999
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.83119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.5A (Ta)
2.5V, 4.5V
20mOhm @ 6.5A, 4.5V
1.25V @ 250µA
14 nC @ 4.5 V
±12V
660 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
4,391
In Stock
1 : ¥3.53000
Cut Tape (CT)
4,000 : ¥0.64180
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.8V, 4.5V
400mOhm @ 500mA, 4.5V
1V @ 250µA
0.92 nC @ 4.5 V
±12V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523 Flat Leads
SC-89, SOT-490
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.