Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138LT1G MOSFET N-CH 50V 200MA SOT23-3 onsemi	352,974 In Stock	1 : ¥3.12000 Cut Tape (CT) 3,000 : ¥0.52959 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	5V	3.5Ohm @ 200mA, 5V	1.5V @ 1mA	-	±20V	50 pF @ 25 V	-	225mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SISS65DN-T1-GE3 MOSFET P-CH 30V 25.9A/94A PPAK Vishay Siliconix	11,435 In Stock	1 : ¥7.14000 Cut Tape (CT) 3,000 : ¥2.71175 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	25.9A (Ta), 94A (Tc)	4.5V, 10V	4.6mOhm @ 15A, 10V	2.3V @ 250µA	138 nC @ 10 V	±20V	4930 pF @ 15 V	-	5.1W (Ta), 65.8W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8S	PowerPAK® 1212-8S
SI2323CDS-T1-BE3 P-CHANNEL 20-V (D-S) MOSFET Vishay Siliconix	12,117 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥1.25607 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	4.6A (Ta), 6A (Tc)	1.8V, 4.5V	39mOhm @ 4.6A, 4.5V	1V @ 250µA	25 nC @ 4.5 V	±8V	1090 pF @ 10 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SIDR668ADP-T1-RE3 MOSFET N-CH 100V 23.3A/104A PPAK Vishay Siliconix	7,231 In Stock	1 : ¥19.54000 Cut Tape (CT) 3,000 : ¥8.82699 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	23.3A (Ta), 104A (Tc)	7.5V, 10V	4.8mOhm @ 20A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	3750 pF @ 50 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
SIDR626LDP-T1-RE3 MOSFET N-CH 60V 45.6A/2.4A PPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥30.70000 Cut Tape (CT) 3,000 : ¥10.82641 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	45.6A (Ta)	4.5V, 10V	1.5mOhm @ 20A, 10V	2.5V @ 250µA	135 nC @ 10 V	±20V	5900 pF @ 30 V	-	6.25W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.