Single FETs, MOSFETs

Results: 3
Manufacturer
EPCNexperia USA Inc.STMicroelectronics
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V200 V650 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)40A (Tc)120A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
5V10V18V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 25A, 10V24mOhm @ 40A, 18V100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA4V @ 1mA5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.3 nC @ 5 V157 nC @ 18 V278 nC @ 10 V
Vgs (Max)
+6V, -4V±20V+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V3380 pF @ 400 V14400 pF @ 50 V
Power Dissipation (Max)
405W (Tc)935W (Tc)-
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
D2PAKDiePowerFlat™ (8x8) HV
Package / Case
8-PowerVDFNDieTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
EPC
17,516
In Stock
1 : ¥30.70000
Cut Tape (CT)
2,500 : ¥10.05701
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
5A (Ta)
5V
100mOhm @ 3A, 5V
2.5V @ 1mA
1.3 nC @ 5 V
+6V, -4V
140 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
D2PAK SOT404
PSMN4R8-100BSEJ
MOSFET N-CH 100V 120A D2PAK
Nexperia USA Inc.
6,872
In Stock
1 : ¥33.74000
Cut Tape (CT)
800 : ¥20.35078
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
120A (Tj)
10V
4.8mOhm @ 25A, 10V
4V @ 1mA
278 nC @ 10 V
±20V
14400 pF @ 50 V
-
405W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8 Power VDFN
SCTL90N65G2V
SILICON CARBIDE POWER MOSFET 650
STMicroelectronics
2,534
In Stock
1 : ¥288.49000
Cut Tape (CT)
3,000 : ¥185.01821
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
40A (Tc)
18V
24mOhm @ 40A, 18V
5V @ 1mA
157 nC @ 18 V
+22V, -10V
3380 pF @ 400 V
-
935W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.