Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI7137DP-T1-GE3 MOSFET P-CH 20V 60A PPAK SO-8 Vishay Siliconix	11,013 In Stock	1 : ¥18.14000 Cut Tape (CT) 3,000 : ¥8.18846 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	60A (Tc)	2.5V, 10V	1.95mOhm @ 25A, 10V	1.4V @ 250µA	585 nC @ 10 V	±12V	20000 pF @ 10 V	-	6.25W (Ta), 104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SCT2H12NYTB SICFET N-CH 1700V 4A TO268 Rohm Semiconductor	2,317 In Stock	1 : ¥52.46000 Cut Tape (CT) 400 : ¥33.66185 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	SiCFET (Silicon Carbide)	1700 V	4A (Tc)	18V	1.5Ohm @ 1.1A, 18V	4V @ 410µA	14 nC @ 18 V	+22V, -6V	184 pF @ 800 V	-	44W (Tc)	175°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TP65H070LSG-TR GANFET N-CH 650V 25A PQFN88 Transphorm	12,306 In Stock	1 : ¥72.82000 Cut Tape (CT) 500 : ¥61.06042 Tape & Reel (TR)	TP65H070L	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	25A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	9.3 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
CSD18510Q5BT MOSFET N-CH 40V 300A 8VSON Texas Instruments	551 In Stock	1 : ¥21.84000 Cut Tape (CT) 250 : ¥14.08476 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	300A (Tc)	4.5V, 10V	0.96mOhm @ 32A, 10V	2.3V @ 250µA	153 nC @ 10 V	±20V	11400 pF @ 20 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.