Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
-OptiMOS™ 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)40A (Tc)
Rds On (Max) @ Id, Vgs
9.6mOhm @ 20A, 10V52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.3V @ 36µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1258 pF @ 25 V2100 pF @ 50 V
Power Dissipation (Max)
3.2W (Ta), 21W (Tc)69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-WDFN (3.3x3.3)PG-TSDSON-8-FL
Package / Case
8-PowerTDFN8-PowerWDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TSDSON-8
BSZ096N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON
Infineon Technologies
10,661
In Stock
1 : ¥13.22000
Cut Tape (CT)
5,000 : ¥5.21942
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
9.6mOhm @ 20A, 10V
2.3V @ 36µA
22 nC @ 10 V
±20V
2100 pF @ 50 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-WDFN
NVTFS5116PLTAG
MOSFET P-CH 60V 6A 8WDFN
onsemi
4,790
In Stock
1 : ¥6.98000
Cut Tape (CT)
1,500 : ¥3.07917
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4.5V, 10V
52mOhm @ 7A, 10V
3V @ 250µA
25 nC @ 10 V
±20V
1258 pF @ 25 V
-
3.2W (Ta), 21W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.