Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
CoolMOS™ CEDUAL COOL®OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V600 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)21A (Ta), 179A (Tc)23A (Ta), 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 50A, 10V4.45mOhm @ 95A, 10V2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id
3.3V @ 109µA3.5V @ 60µA4.5V @ 521µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V69 nC @ 10 V79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V5200 pF @ 50 V6514 pF @ 75 V
Power Dissipation (Max)
3W (Ta), 208W (Tc)5W (Ta), 292W (Tc)38W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
8-TDFNW (8.3x8.4)PG-TDSON-8 FLPG-TO252-3
Package / Case
8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO252-3
Infineon Technologies
10,206
In Stock
1 : ¥3.69000
Cut Tape (CT)
2,500 : ¥1.49336
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2.3A (Tc)
10V
2.1Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
-
38W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
6,698
In Stock
1 : ¥26.03000
Cut Tape (CT)
2,500 : ¥12.66044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
21A (Ta), 179A (Tc)
8V, 10V
3mOhm @ 50A, 10V
3.3V @ 109µA
69 nC @ 10 V
±20V
5200 pF @ 50 V
-
3W (Ta), 208W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
8-TDFNW
NVMTSC4D3N15MC
PTNG 150V IN CEBU DFNW 8X8 DUAL
onsemi
2,905
In Stock
1 : ¥49.42000
Cut Tape (CT)
3,000 : ¥24.03943
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
23A (Ta), 165A (Tc)
10V
4.45mOhm @ 95A, 10V
4.5V @ 521µA
79 nC @ 10 V
±20V
6514 pF @ 75 V
-
5W (Ta), 292W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-TDFNW (8.3x8.4)
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.