Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)510mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V1.2V, 4.5V
Rds On (Max) @ Id, Vgs
990mOhm @ 100mA, 4.5V1.2Ohm @ 100mA, 2.5V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V27.6 pF @ 16 V
Power Dissipation (Max)
150mW (Ta)400mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
EMT3F (SOT-416FL)X2-DFN0806-3
Package / Case
3-XFDFNSC-89, SOT-490
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EMT3F
RE1C002UNTCL
MOSFET N-CH 20V 200MA EMT3F
Rohm Semiconductor
1,350,601
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.19539
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 100mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
SBR 3-DFN
DMN2990UFA-7B
MOSFET N-CH 20V 510MA 3DFN
Diodes Incorporated
33,778
In Stock
5,000,000
Factory
1 : ¥4.10000
Cut Tape (CT)
10,000 : ¥0.95582
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
510mA (Ta)
1.2V, 4.5V
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.5 nC @ 4.5 V
±8V
27.6 pF @ 16 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0806-3
3-XFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.