Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0.9V, 4.5V1.5V, 4.5V
Rds On (Max) @ Id, Vgs
38mOhm @ 3.6A, 4.5V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 1mA1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V339 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)940mW
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3UMT3F
Package / Case
SC-85TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UMT3F
RU1J002YNTCL
MOSFET N-CH 50V 200MA UMT3F
Rohm Semiconductor
630,845
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34818
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
0.9V, 4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
SOT-23-3
DMN2056U-7
MOSFET N-CHANNEL 20V 4A SOT23-3
Diodes Incorporated
105,461
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.69704
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
38mOhm @ 3.6A, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
±8V
339 pF @ 10 V
-
940mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.