Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Vishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
19.7A (Tc)24A (Tc)
Rds On (Max) @ Id, Vgs
9.8mOhm @ 13A, 10V16.5mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V80 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 15 V2610 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta), 5.7W (Tc)4.1W (Ta), 24W (Tc)
Supplier Device Package
8-DFN-EP (3x3)8-SOIC
Package / Case
8-PowerVDFN8-SOIC (0.154", 3.90mm Width)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
249,018
In Stock
1 : ¥3.61000
Cut Tape (CT)
5,000 : ¥1.16087
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
24A (Tc)
4.5V, 10V
16.5mOhm @ 12A, 10V
2.3V @ 250µA
34 nC @ 10 V
±25V
1180 pF @ 15 V
-
4.1W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
8-SOIC
SI4425DDY-T1-GE3
MOSFET P-CH 30V 19.7A 8SO
Vishay Siliconix
108,581
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.71768
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
19.7A (Tc)
4.5V, 10V
9.8mOhm @ 13A, 10V
2.5V @ 250µA
80 nC @ 10 V
±20V
2610 pF @ 15 V
-
2.5W (Ta), 5.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.