Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRF4905STRLPBF MOSFET P-CH 55V 42A D2PAK Infineon Technologies	7,145 In Stock	1 : ¥22.25000 Cut Tape (CT) 800 : ¥12.42796 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	20mOhm @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	3500 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NX3008NBK,215 MOSFET N-CH 30V 400MA TO236AB Nexperia USA Inc.	300,315 In Stock	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.37870 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	400mA (Tc)	1.8V, 4.5V	1.4Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.68 nC @ 4.5 V	±8V	50 pF @ 15 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
STB130N6F7 MOSFET N-CH 60V 80A D2PAK STMicroelectronics	970 In Stock	1 : ¥22.49000 Cut Tape (CT) 1,000 : ¥7.42115 Tape & Reel (TR)	STripFET™ F7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	5mOhm @ 40A, 10V	4V @ 250µA	42 nC @ 10 V	±20V	2600 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.