Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STL11N65M5 MOSFET N-CH 650V 8.5A POWERFLAT STMicroelectronics	975 In Stock	1 : ¥18.31000 Cut Tape (CT) 3,000 : ¥8.23668 Tape & Reel (TR)	MDmesh™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	8.5A (Tc)	10V	530mOhm @ 4.25A, 10V	5V @ 250µA	17 nC @ 10 V	±25V	644 pF @ 100 V	-	70W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerFLAT™ (5x5)	8-PowerVDFN
MSC017SMA120J MOSFET SIC 1200V 17 MOHM SOT-227 Microchip Technology	19 In Stock	1 : ¥544.45000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	88A (Tc)	20V	22mOhm @ 40A, 20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	+23V, -10V	5280 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	SOT-227	-

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.