Single FETs, MOSFETs

Results: 2
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)50A (Tc)
Rds On (Max) @ Id, Vgs
9.2mOhm @ 25A, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2V @ 35µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 10 V9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V880 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)3.6W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)SOT-23
Package / Case
8-PowerTDFN, 5 LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
5-DFN, 8-SO Flat Lead
NTMFS5C673NLT1G
MOSFET N-CH 60V 5DFN
onsemi
2,748
In Stock
73,500
Factory
1 : ¥6.65000
Cut Tape (CT)
1,500 : ¥2.84979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
9.2mOhm @ 25A, 10V
2V @ 35µA
9.5 nC @ 10 V
±20V
880 pF @ 25 V
-
3.6W (Ta), 46W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
BSS123
BSS123
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
93,709
In Stock
1 : ¥1.07000
Cut Tape (CT)
3,000 : ¥0.18956
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
2.5V @ 250µA
1.8 nC @ 10 V
±20V
14 pF @ 50 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.